JPS6327865B2 - - Google Patents

Info

Publication number
JPS6327865B2
JPS6327865B2 JP55022937A JP2293780A JPS6327865B2 JP S6327865 B2 JPS6327865 B2 JP S6327865B2 JP 55022937 A JP55022937 A JP 55022937A JP 2293780 A JP2293780 A JP 2293780A JP S6327865 B2 JPS6327865 B2 JP S6327865B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
type
main electrode
electrode region
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55022937A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56120169A (en
Inventor
Kunihiro Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2293780A priority Critical patent/JPS56120169A/ja
Publication of JPS56120169A publication Critical patent/JPS56120169A/ja
Publication of JPS6327865B2 publication Critical patent/JPS6327865B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
JP2293780A 1980-02-25 1980-02-25 Semiconductor device Granted JPS56120169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2293780A JPS56120169A (en) 1980-02-25 1980-02-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2293780A JPS56120169A (en) 1980-02-25 1980-02-25 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56120169A JPS56120169A (en) 1981-09-21
JPS6327865B2 true JPS6327865B2 (en]) 1988-06-06

Family

ID=12096540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2293780A Granted JPS56120169A (en) 1980-02-25 1980-02-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56120169A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63191754A (ja) * 1987-01-21 1988-08-09 日本テクトロン株式会社 試薬収納容器

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0673649A (ja) * 1991-12-26 1994-03-15 Goosen:Kk 組紐状糸条物
JP4860146B2 (ja) * 2004-12-24 2012-01-25 パナソニック株式会社 サージ保護用半導体装置
JP2014165317A (ja) * 2013-02-25 2014-09-08 Toshiba Corp 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50108885A (en]) * 1974-01-31 1975-08-27

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63191754A (ja) * 1987-01-21 1988-08-09 日本テクトロン株式会社 試薬収納容器

Also Published As

Publication number Publication date
JPS56120169A (en) 1981-09-21

Similar Documents

Publication Publication Date Title
US5468654A (en) Method of manufacturing an insulated gate bipolar transistor
JPH04146674A (ja) 半導体装置及びその製造方法
JP2862027B2 (ja) 絶縁ゲート型バイポーラトランジスタ
JP3165480B2 (ja) ターンオフサイリスタ
JPH02210860A (ja) 半導体集積回路装置
JPH049378B2 (en])
EP0064614B1 (en) Improved emitter structure for semiconductor devices
JPS6327865B2 (en])
JPH0465552B2 (en])
US3936856A (en) Space-charge-limited integrated circuit structure
JPH0888290A (ja) 半導体装置およびその使用方法
JP4029549B2 (ja) 半導体装置
JP2526960B2 (ja) 導電変調型ｍｏｓｆｅｔ
JPS584829B2 (ja) 半導体集積回路
JPH0818075A (ja) ショットキーバリヤダイオード及び半導体集積回路
JP2518929B2 (ja) バイポ―ラ型半導体集積回路
JP3128958B2 (ja) 半導体集積回路
JP2916158B2 (ja) 導電変調型ｍｏｓｆｅｔ
KR930005948B1 (ko) 래터럴형 반도체장치
JP2000216381A (ja) 電界効果トランジスタ
JP3121537B2 (ja) 半導体装置
JPH08227941A (ja) 複合半導体素子
JPS621261B2 (en])
JPH06342903A (ja) 横型導電変調型ｍｏｓｆｅｔ
JPS5916414B2 (ja) 半導体装置